Innovation & Tech Development Engineer

Seeking an Engineer to lead development, testing, and validation activities for next-generation GaN power technologies, including design of experiments, failure analysis, and IP generation within a semiconductor R&D environment.

Key Responsibilities:

• Drive GaN power technology development projects and work packages.

• Design and develop test structures for process control and evaluation.

• Perform electrical characterization of devices and screening.

• Conduct and coordinate physical/electrical failure analyses.

• Plan and assess design of experiments and process variation experiments.

• Participate in root cause analysis using 8D/Six Sigma methods.

• Collaborate on technology roadmap and innovation initiatives.

• Generate Intellectual Property based on R&D outcomes.

Required Skills:

• Master's degree or higher in Electrical Engineering, Physics, or related field.

• 5+ years in semiconductor testing, process development, or integration.

• Familiarity with fab systems and production processes (Si, SiC, GaN).

• Strong experience in project leadership and cross-functional teamwork.

• Hands-on with GaN HEMT technology is a strong plus.

• Proficient in high-volume manufacturing, reliability, and quality analysis.

• Skilled in structured problem-solving (e.g., 8D, Six Sigma).

• Excellent English communication; German language is an added advantage.